ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Santa Clara, CA and Kyoto, Japan, June 03, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM’s device was selected as a SiC power device that supports next-generation power supply systems.
Santa Clara, CA and Kyoto, Japan, June 03, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM’s device was selected as a SiC power device that supports next-generation power supply systems.
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